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| savantic semiconductor product specification silicon pnp power transistors 2SA636 2SA636a d escription with to-202 package complement to type 2sc1098/1098a high breakdown voltage high transition frequency applications for audio frequency power amplifier and low speed switching applications pinning(see fig.2) pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -70 v 2SA636 -45 v ceo collector-emitter voltage 2SA636a open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a i cm collector current-peak -5 a i b base current -0.6 a t c =25 10 p t total power dissipation t a =25 1.2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-202) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA636 2SA636a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-1.5a ;i b =-0.15a -0.5 -2.0 v v besat base-emitter saturation voltage i c =-1.5a ;i b =-0.15a -0.8 -2.0 v i cbo collector cut-off current v cb =-45v; i e =0 -1 a i ebo emitter cut-off current v eb =-3v; i c =0 -1 a h fe-1 dc current gain i c =-20ma ; v ce =-5v 20 h fe-2 dc current gain i c =-0.5a ; v ce =-5v 40 250 c ob output capacitance i e =0; v cb =-10v;f=1mhz 60 pf f t transition frequency i c =-0.1a ; v cb =-5v 45 mhz h fe-2 classifications n m l k 40-60 50-100 80-160 120-250 savantic semiconductor product specification 3 silicon pnp power transistors 2SA636 2SA636a package outline fig.2 outline dimensions |
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